Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Fermi Level Dynamics

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Bottom-up synthesis of molecular nanodiamond from nanographene.

Nature·2026

Same author

Confocal photoluminescence mapping of diamond photonic crystal cavity modes for the silicon vacancy center.

Optics express·2026

Same author

Optically Detected Magnetic Resonance Based Intracellular Thermometry Using Nanodiamonds Implanted in Adherent Cancer Cells.

ACS applied nano materials·2026

Same author

Overcoming Frequency Resolution Limits Using a Solid-State Spin Quantum Sensor.

Physical review letters·2026

Same author

Quantum Memory Enhanced Multipoint Correlation Spectroscopy for Statistically Polarized NMR.

Physical review letters·2026

Same author

Miniature Electromagnetic and Mechanical Resonators for Measurements of Acceleration with the Help of Nitrogen-Vacancy Color Centers.

Micromachines·2025

Search research articles

Related Experiment Video

Updated: Jul 4, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Germanium Vacancy in Diamond Quantum Memory Exceeding 20 ms.

Katharina Senkalla¹, Genko Genov¹, Mathias H Metsch¹

¹Institute for Quantum Optics, Ulm University, Albert-Einstein-Allee 11, 89081 Ulm, Germany.

Physical Review Letters

|January 26, 2024

Summary

Researchers enhanced the coherence time of germanium vacancy centers (GeV) in diamond to over 20 ms at millikelvin temperatures. This breakthrough advances defects for quantum network applications.

More Related Videos

Gradient Echo Quantum Memory in Warm Atomic Vapor

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Related Experiment Videos

Last Updated: Jul 4, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Gradient Echo Quantum Memory in Warm Atomic Vapor

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Area of Science:

Quantum Information Science
Solid-State Physics
Materials Science

Background:

Negatively charged group-IV defects in diamond are promising for quantum networks due to their spin-photon interface.
Achieving long coherence times is crucial for practical quantum applications but remains a significant challenge.

Purpose of the Study:

To demonstrate coherent control of the germanium vacancy center (GeV) at cryogenic temperatures.
To significantly extend the coherence time of GeV defects for enhanced quantum technology performance.

Main Methods:

Experimental demonstration of coherent control for GeV defects at millikelvin temperatures.
Modeling of magnetic and amplitude noise using an Ornstein-Uhlenbeck process to understand decoherence mechanisms.

Main Results:

Extended the coherence time of GeV defects by several orders of magnitude, exceeding 20 milliseconds.
The Ornstein-Uhlenbeck noise model accurately reproduced the observed experimental results.

Conclusions:

Coherent control at millikelvin temperatures dramatically improves GeV coherence times.
The developed noise modeling approach offers a pathway for optimizing group-IV defects in diamond for quantum technologies.