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Heat-Assisted Magnetization Switching in Flexible Spin-Orbit Torque Devices
Wenli Wang1, Jiaqiang Liu1, Wei Su1
1State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Engineering Research Center of Spin Quantum Sensor Chips, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
Nano Letters
|February 2, 2024
Summary
Researchers achieved a 98% reduction in writing energy for flexible spin-orbit torque devices by engineering magnetic anisotropy. This breakthrough enables low-power, high-stability flexible spintronics.
Area of Science:
- Spintronics
- Materials Science
- Condensed Matter Physics
Background:
- Heat-assisted magnetic anisotropy engineering is effective in magnetic writing and microwave amplification.
- Spin-orbit torque (SOT) devices exhibit efficient heat dissipation, limiting thermal effects on magnetic anisotropy.
Purpose of the Study:
- To reduce the switching current density in flexible SOT heterostructures.
- To enable low-power consumption and high stability in flexible spintronics.
Main Methods:
- Fabrication of flexible SOT heterostructures.
- Investigated Joule dissipation and thermal conductivity effects on magnetic anisotropy.
- Measured switching current density and magnetic anisotropy recovery.
Main Results:
- Achieved a dramatically reduced switching current density of ~2.59 MA/cm².
- Demonstrated a 98% decrease in writing energy consumption on flexible substrates compared to silicon.
- Observed recovery of magnetic anisotropy after impulse, ensuring high stability.
Conclusions:
- Flexible SOT devices can achieve significantly lower switching currents through engineered magnetic anisotropy.
- The combination of reduced energy consumption and retained stability is crucial for advanced flexible spintronics applications.
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