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Single-Gate MoS2 Tunnel FET with a Thickness-Modulated Homojunction
Tomohiro Fukui1, Tomonori Nishimura1, Yasumitsu Miyata2
1Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
ACS Applied Materials & Interfaces
|February 7, 2024
Summary
This study demonstrates room-temperature tunnel field-effect transistor (TFET) operation using a novel molybdenum disulfide (MoS2) homojunction. The research highlights negative differential resistance, paving the way for low-power electronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) materials offer potential for low-power electronics due to their unique van der Waals heterojunctions.
- Achieving high performance in 2D material-based devices is challenging due to complex assembly requirements.
- Interface control is critical for optimizing device characteristics in 2D heterostructures.
Purpose of the Study:
- To investigate the feasibility of tunnel field-effect transistor (TFET) operation using a homojunction approach.
- To address challenges related to interface control in 2D material-based TFETs.
- To explore the potential of molybdenum disulfide (MoS2) for room-temperature electronic applications.
Main Methods:
- Fabrication of a thickness-modulated n/p+-homojunction using Nb-doped p+-MoS2.
- Characterization of the homojunction device to analyze its electrical properties.
- Investigation of current transport mechanisms at room temperature.
Main Results:
- Successful realization of a homojunction TFET using Nb-doped MoS2.
- Observation of negative differential resistance (NDR) at room temperature.
- Demonstration of TFET operation under type III band alignment conditions with a single gate.
Conclusions:
- Homojunction design in 2D materials can circumvent interface trap issues.
- Room-temperature TFET operation is achievable with ideal interfaces and type III band alignment.
- The findings suggest a viable pathway for developing low-power electronics for the Internet of Things (IoT) era.
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