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Updated: Jul 3, 2025

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
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Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates

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Colossal Magnetoresistive Switching Induced by d0 Ferromagnetism of MgO in a Semiconductor Nanochannel Device with

Shinobu Ohya1,2,3, Shun Tsuruoka1, Masaya Kaneda1

  • 1Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.

Advanced Materials (Deerfield Beach, Fla.)
|February 14, 2024
PubMed

Keywords:
d0 ferromagnetismoxide electronicsresistive switchingspintronicsvacancy

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