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Interfacial negative magnetization in Ni encapsulated layer-tunable nested MoS₂ nanostructure with robust memory

Shatabda Bhattacharya^1,2, Tatsuhiko Ohto², Hirokazu Tada²

¹School of Materials Sciences, Indian Association for the Cultivation of Science Jadavpur Kolkata-700032 India cnssks@iacs.res.in.

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|February 15, 2024

Summary

Researchers created a novel hybrid nanostructure by encapsulating nickel (Ni) in molybdenum disulfide (MoS2). This structure exhibits unusual negative magnetization and robust thermomagnetic memory, controllable by temperature and magnetic fields.

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Investigating magnetism in low-dimensional diamagnetic systems like molybdenum disulfide (MoS2) is crucial.
Interfacial interactions and layer-number tunability are key factors in controlling magnetic properties.

Purpose of the Study:

To explore the evolution of magnetism in MoS2-based hybrid nanostructures.
To investigate the magnetization dynamics of Ni nanophases encapsulated in MoS2.
To understand the potential for thermomagnetic memory effects.

Main Methods:

Encapsulation of 12 nm Ni nanophases within MoS2.
Magnetization dynamics studied from 2-300 K.
Density Functional Theory (DFT) calculations for interfacial interactions.
DC magnetization and relaxation measurements with varying protocols.
Time-dependent magnetization studies.

Main Results:

Discovery of a negative magnetization state with giant exchange bias in the Ni/MoS2 hybrid.
Observation of a reversible, temperature-induced increase in spin magnetic moment and coercivity.
DFT confirmed interfacial charge transfer and spin-polarized density of states.
Evidence of robust thermoremanent magnetization, indicating memory effects.
Identification of negative magnetization and charge transfer as key contributors to the memory effect.

Conclusions:

The Ni/MoS2 hybrid nanostructure exhibits unique magnetic properties, including negative magnetization and giant exchange bias.
The system demonstrates robust thermomagnetic memory, potentially useful for data storage applications.
The memory effect is tunable via temperature and external magnetic fields, offering control over its properties.