Atomic Defect Quantification by Lateral Force Microscopy

Area of Science:

• Materials Science
• Nanotechnology
• Surface Science

Background:

• Atomic defects in 2D materials significantly influence their electronic and optoelectronic properties.
• Accurate nanoscale defect quantification is crucial for optimizing 2D material performance but remains challenging, especially for insulating materials.

Purpose of the Study:

• To demonstrate Lateral Force Microscopy (LFM) as a viable technique for observing atomic defects in both semiconducting and insulating 2D materials.
• To overcome limitations in current defect characterization methods for 2D materials.

Main Methods:

• Enhanced LFM sensitivity by analyzing cantilever mechanics.
• Applied LFM to map atomic-scale point defects on bulk Molybdenum Diselenide (MoSe2).
• Correlated LFM findings with Conductive Atomic Force Microscopy (CAFM) measurements.

Main Results:

• LFM successfully located atomic defects on bulk MoSe2 surfaces.
• Direct comparison confirmed LFM-observed point defects correspond to actual atomic defects.
• Demonstrated LFM's capability to characterize defects in insulating hexagonal boron nitride (hBN), including intrinsic and annealing-induced defects.

Conclusions:

• LFM is a versatile mechanical technique for atomic defect characterization in diverse 2D materials, including insulators.
• This method enables defect-property relationship studies without requiring conductive pathways.
• The findings are expected to accelerate 2D materials research by facilitating routine defect analysis.