Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Design Example: Capacitance Multiplier Circuit

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

Non-ohmic Devices

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Diffusive memristors in the edge of chaos.

Nature communications·2026

Same author

Printed devices turn neuromorphic.

Nature nanotechnology·2026

Same author

Trustworthy tree-based machine learning by MoS<sub>2</sub> flash-based analog content-addressable memory with inherent soft boundaries.

Nature communications·2026

Same author

Gungnir codec enabling high error-tolerance and low-redundancy DNA storage through substantial computing power.

Nature communications·2026

Same author

High-temperature memristors enabled by interfacial engineering.

Science (New York, N.Y.)·2026

Same author

Programmable ferroelectric rectifier for reliable and efficient neuromorphic crossbar array.

Nature communications·2026

Same journal

A native sulfur deposit in Gale crater, Mars.

Science (New York, N.Y.)·2026

Same journal

Coordinated demise of harmful algal blooms.

Science (New York, N.Y.)·2026

Same journal

Genetic effects put into context.

Science (New York, N.Y.)·2026

Same journal

Bacteria share proteins to survive antibiotics.

Science (New York, N.Y.)·2026

Same journal

Impacts shaped Earth's first continents.

Science (New York, N.Y.)·2026

Same journal

Erratum for the Report "Covalently bonded single-molecule junctions with stable and reversible photoswitched conductivity" by C. Jia <i>et al</i>.

Science (New York, N.Y.)·2026

See all related articles

Search research articles

Related Experiment Video

Updated: Jul 2, 2025

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Programming memristor arrays with arbitrarily high precision for analog computing.

Wenhao Song^1,2, Mingyi Rao², Yunning Li³

¹Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.

Science (New York, N.Y.)

|February 22, 2024

Summary

This summary is machine-generated.

This study introduces a novel in-memory computing approach using memristors to overcome precision limitations in complex physical system modeling. The new method achieves high-precision computation with low-power analog devices, enhancing scientific discovery.

More Related Videos

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Related Experiment Videos

Last Updated: Jul 2, 2025

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Area of Science:

* Neuromorphic engineering and advanced computing architectures.
* Materials science and solid-state device physics.

Background:

* In-memory computing offers potential for modeling complex physical systems but faces challenges like noise and variability.
* These limitations hinder scalability, accuracy, and precision in high-performance computations.

Purpose of the Study:

* To propose and demonstrate a circuit architecture and programming protocol for high-precision in-memory computing.
* To enable low-precision analog devices to perform high-precision computations by converting results to digital at the final step.

Main Methods:

* Utilizing a weighted sum of multiple memristor devices to represent a single numerical value.
* Implementing a programming protocol where subsequent devices compensate for errors in preceding ones.
* Experimental validation on a memristor system-on-chip (SoC).

Main Results:

* Demonstrated high-precision solutions for various scientific computing tasks using the proposed architecture.
* Achieved significant power efficiency advantages compared to conventional digital computing approaches.
* Successfully compensated for analog device inaccuracies through the novel programming protocol.

Conclusions:

* The developed in-memory computing architecture and protocol effectively overcome precision limitations in analog devices.
* This approach enables high-performance, power-efficient computation for complex scientific problems.
* The memristor-based system-on-chip demonstrates a viable path towards next-generation computing for scientific research.