Characterization of a Heterojunction Silicon Solar Cell by Means of Impedance Spectroscopy

Kazybek Aimaganbetov1, Darkhan Yerezhep1,2, Mussabek Kishkenebayev2

  • 1Institute of Physics and Technology, Satbayev University, Almaty 050032, Kazakhstan.

Micromachines
|February 24, 2024
PubMed

Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
531
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
257
Modeling of Diode Forward Characteristics01:19

Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
533
Modeling of Diode Reverse Characteristics01:14

Modeling of Diode Reverse Characteristics

In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
275
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
531
Impedances and Admittance01:23

Impedances and Admittance

In the realm of AC circuits, passive circuit elements like resistors, inductors, and capacitors take on a different character when characterized by phasor voltage and current. Their behavior is expressed through impedance, a vital concept in AC circuit analysis.
Impedance is a measure of resistance to sinusoidal current flow in an AC circuit. Unlike their behavior in DC circuits, where inductors appear as short circuits and capacitors as open circuits, the behavior of these components in AC...
695