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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
Investigating the Behavior of Thin-Film Formation over Time as a Function of Precursor Concentration and Gas
Faegheh Fotouhiardakani1,2, Alex Destrieux1,2, Jacopo Profili1,2
1Laboratoire d'Ingénierie de Surface, Centre de Recherche sur les Matériaux Avancés, Département de Génie des Mines, de la Métallurgie et des Matériaux, Université Laval, Quebec, QC G1V 0A6, Canada.
Abstract:
This study aims to establish a correlation between the fragmentation process and the growth mechanisms of a coating deposited on a fluoropolymer. Deposition was carried out using dielectric barrier discharge at atmospheric pressure, employing an oxygen-containing organic precursor in a nitrogen environment. The findings reveal that the impact of precursor concentration on the formation of specific functionalities is more significant than the influence of treatment time. The X-ray photoelectron spectroscopy (XPS) results obtained indicate a reduction in the N/O ratio on the coating's surface as the precursor concentration in the discharge increases. Fourier transform infrared spectroscopy (FTIR) analysis, conducted in the spectral range of 1500 cm-1 to 1800 cm-1, confirmed the connection between the chemical properties of plasma-deposited thin films and the concentration of organic precursors in the discharge. Furthermore, the emergence of nitrile moieties (C≡N) in the FTIR spectrum at 2160 cm-1 was noted under specific experimental conditions.
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