Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Zebrafish Functional Screening of FDA-Approved Drugs for Autosomal Dominant Retinitis Pigmentosa Caused by RHODOPSIN Q344X Mutation.

bioRxiv : the preprint server for biology·2026

Same author

Spectroscopic Evaluation of AlN/n-Si MIS Structures through Frequency-Driven Dielectric Characterization.

ACS omega·2026

Same author

Enhanced Mechanical Properties of AA6082 Matrix Composites Reinforced with B<sub>4</sub>C and TiO<sub>2</sub>: A Powder Metallurgy Approach.

ACS omega·2026

Same author

Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling.

ACS omega·2025

Same author

The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities.

ACS omega·2024

Same author

Beta Irradiation Effects on Electrical Characteristics of Graphene-Doped PVA/n-type Si Nanostructures.

ACS omega·2024

Search research articles

Related Experiment Video

Updated: Jul 2, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Structural and Optical Properties of Interfacial InSe Thin Film.

Cansu Emir^1,2, Adem Tataroglu³, Emre Coşkun^4,5

¹Graduate School of Natural and Applied Sciences, Gazi University, Ankara 06830, Turkey.

|February 26, 2024

Summary

This study details the optical and structural properties of indium selenide (InSe) films. The findings suggest InSe films are suitable for optoelectronic and photovoltaic applications.

More Related Videos

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries

Published on: April 22, 2013

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Published on: March 21, 2018

Related Experiment Videos

Last Updated: Jul 2, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries

Published on: April 22, 2013

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Published on: March 21, 2018

Area of Science:

Materials Science
Solid State Physics
Optoelectronics

Background:

Indium selenide (InSe) is a semiconductor material with potential applications in electronics and photonics.
Understanding the optical and structural properties of InSe films is crucial for device fabrication.

Purpose of the Study:

To comprehensively investigate the optical and structural characteristics of indium selenide (InSe) films.
To determine the suitability of InSe films for optoelectronic and photovoltaic applications.

Main Methods:

Structural characterization using X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDX).
Optical characterization via UV-vis spectrophotometry (500-1000 nm).
Extraction of optical parameters: extinction coefficient (k), optical band gap (Eg), refractive index (n), absorption coefficient (α), and optical conductivity (σopt).

Main Results:

The structural properties of InSe films on glass substrates were analyzed.
Optical properties were determined, revealing a direct optical transition.
Key optical parameters such as band gap and refractive index were calculated.

Conclusions:

The investigated indium selenide films exhibit favorable optical and structural properties.
The direct optical transition and calculated parameters indicate potential for optoelectronic devices.
InSe films show promise for use in advanced photovoltaic and optoelectronic applications.