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Optical Modulation of MoTe2/Ferroelectric Heterostructure via Interface Doping
Yuqing Zhou1,2, Chao Yang1, Xingke Fu3
1Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
ACS Applied Materials & Interfaces
|February 27, 2024
Summary
Interface doping controls ferroelectric polarization using ultraviolet light in MoTe2/BaTiO3/La0.7Sr0.3MnO3 heterostructures. Thickness-dependent doping leads to opposite polarization switching, advancing nanoelectronic and optoelectronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Ferroelectric heterostructures are crucial for nanoelectronic and optoelectronic devices.
- Controlling ferroelectric polarization via interface doping is an efficient strategy.
- Ultraviolet (UV) light offers a promising method for optical modulation.
Purpose of the Study:
- To investigate UV light-induced polarization switching in MoTe2/BaTiO3/La0.7Sr0.3MnO3 (MoTe2/BTO/LSMO) heterostructures.
- To explore the influence of MoTe2 film thickness on polarization behavior.
- To understand the underlying mechanisms of optical modulation in ferroelectric heterostructures.
Main Methods:
- Fabrication of MoTe2/BTO/LSMO heterostructures with varying MoTe2 thicknesses.
- Characterization of UV light-induced polarization switching.
- Analysis of interface doping effects and band structure modulation.
- Measurement of electric transport characteristics to determine interface properties.
Main Results:
- Demonstrated opposite UV light-induced polarization switching behaviors based on MoTe2 thickness.
- Identified thickness-dependent interface doping with opposite polarity.
- Observed enhanced effective built-in fields triggering carrier transfer in MoTe2 and BTO films.
- Revealed interface barrier heights and trap states under different polarization states.
Conclusions:
- The interplay of contact fields, polarization fields, and optically excited carriers dictates UV light-induced polarization switching.
- Multifield modulation of ferroelectric polarization is achievable.
- These findings enhance the potential applications of ferroelectric devices in optoelectronics, logic, memory, and synaptic functions.
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