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Gas-Phase Synthesis of Iron Silicide Nanostructures Using a Single-Source Precursor: Comparing Direct-Write
Felix Jungwirth1,2, Alba Salvador-Porroche3, Fabrizio Porrati1
1Institute of Physics, Goethe University Frankfurt, Max-von-Laue-Str. 1, Frankfurt am Main 60323, Germany.
Summary
Investigating precursor materials for nanostructure fabrication reveals significant differences in deposit composition. Focused-ion-beam-induced deposition (FIBID) and focused-electron-beam-induced deposition (FEBID) show varying metal/metalloid content and elemental ratios compared to chemical vapor deposition (CVD).
Area of Science:
- Materials Science
- Nanotechnology
- Surface Science
Background:
- Direct nanoprinting and maskless fabrication of nanostructures rely on precursor material selection.
- Understanding precursor decomposition and deposit composition is crucial for controlling nanostructure properties.
- Focused-ion-beam-induced deposition (FIBID), focused-electron-beam-induced deposition (FEBID), and chemical vapor deposition (CVD) are key fabrication techniques.
Purpose of the Study:
- To investigate and compare the material composition and microstructure of inorganic deposits derived from the (H3Si)2Fe(CO)4 precursor using FIBID, FEBID, and CVD.
- To analyze the elemental ratios and metal/metalloid content in deposits produced by different fabrication methods.
- To explore the thermal effects during precursor fragmentation in direct-writing processes and demonstrate 3D FEBID writing.
Main Methods:
- Fabrication of nanostructures using focused-ion-beam-induced deposition (FIBID) with Ga+ ions, focused-electron-beam-induced deposition (FEBID), and chemical vapor deposition (CVD).
- Analysis of deposit composition and microstructure using elemental analysis (at. %) and ratio determination (Fe:Si).
- In situ investigation of thermal effects during precursor fragmentation.
Main Results:
- Focused-ion-beam-induced deposition (FIBID) yielded deposits with up to 90 at. % metal/metalloid content, while chemical vapor deposition (CVD) films exceeded 90 at. %. Focused-electron-beam-induced deposition (FEBID) resulted in material with less than 45 at. % metal/metalloid.
- The Fe:Si ratio was well-retained in FEBID and CVD, but FIBID using Ga+ ions led to significant silicon loss (>50%).
- An in situ method for studying thermal effects was presented, and the precursor's suitability for nanoscale 3D FEBID writing was confirmed.
Conclusions:
- The choice of fabrication technique significantly impacts the composition and microstructure of nanostructures derived from the (H3Si)2Fe(CO)4 precursor.
- For binary materials via FIBID, precursors with enhanced non-metal bonding are recommended to mitigate elemental loss.
- The precursor is suitable for advanced applications like 3D nanoprinting using FEBID.
