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Updated: Jul 1, 2025
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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
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Area-selective atomic layer deposition on 2D monolayer lateral superlattices.
Jeongwon Park1, Seung Jae Kwak2, Sumin Kang1
1Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.
Nature Communications
|March 8, 2024
Summary
A novel superlattice-based area-selective atomic layer deposition (AS-ALD) achieves sub-10 nm patterning resolution. This advanced technique uses a 2D MoS2-MoSe2 superlattice template for enhanced selectivity in next-generation device fabrication.
Area of Science:
- Materials Science
- Nanotechnology
- Chemical Engineering
Background:
- Advanced patterning is crucial for high-speed, low-power electronic devices.
- Area-selective atomic layer deposition (AS-ALD) offers direct material deposition but faces resolution and selectivity challenges.
- Existing AS-ALD methods struggle with fine patterning and precursor compatibility.
Purpose of the Study:
- To introduce a superlattice-based AS-ALD (SAS-ALD) process for improved patterning.
- To demonstrate sub-10 nm resolution using a 2D MoS2-MoSe2 lateral superlattice template.
- To explore a new selectivity mechanism based on precursor adsorption and diffusion.
Main Methods:
- Fabrication of a 2D MoS2-MoSe2 lateral superlattice as a pre-defining template.
- Controlled chemical vapor deposition (CVD) precursor duration for precise patterning.
- Application of AS-ALD on the superlattice template to achieve selective material deposition.
Main Results:
- Achieved a minimum half pitch size of sub-10 nm for AS-ALD on the 2D superlattice.
- Demonstrated a novel selectivity mechanism distinct from conventional AS-ALD.
- Successfully deposited various materials including Al2O3, HfO2, Ru, Te, and Sb2Se3.
Conclusions:
- SAS-ALD offers a viable solution for high-resolution, selective area deposition.
- The technique is compatible with reactive precursors and enables diverse material deposition.
- This advancement paves the way for next-generation integrated circuits with enhanced performance.
