Thermal scanning probe and laser lithography for patterning nanowire based quantum devices.

Area of Science:

• Quantum Computing
• Materials Science
• Nanotechnology

Background:

• Semiconductor nanowires (NWs) are crucial for developing quantum devices, including topological qubits.
• Disorder in NWs significantly hinders the creation of stable topological quantum states.
• Advanced fabrication is essential for overcoming these limitations.

Purpose of the Study:

• To develop and demonstrate a hybrid lithography technique for fabricating high-quality semiconductor nanowire quantum devices.
• To investigate the impact of fabrication processes on quantum transport in nanowires.
• To reduce disorder in quantum devices based on 1D semiconductors.

Main Methods:

• Utilized a hybrid lithography tool combining thermal scanning probe lithography and direct laser writing.
• Fabricated quantum devices using thin Indium Antimonide (InSb) nanowires with 200 nm contact spacing.
• Performed electrical characterization to assess transport properties.

Main Results:

• Demonstrated quasi-ballistic transport in the fabricated InSb nanowire devices.
• The hybrid lithography approach shows potential for minimizing fabrication-induced disorder.
• Successful fabrication of quantum devices with precise control over dimensions.

Conclusions:

• The developed hybrid lithography method is effective for producing high-quality semiconductor nanowire quantum devices.
• This technique offers a pathway to mitigate disorder, crucial for realizing robust topological quantum states.
• Further advancements in nanofabrication are vital for next-generation quantum technologies.