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Controlling GaN-Based Laser Diode Performance by Variation of the Al Content of an Inserted AlGaN Electron Blocking

Yuhui Chen1, Daiyi Jiang2, Chunmiao Zeng2

  • 1Department of Applied Physics, China Agricultural University, Beijing 100083, China.

Nanomaterials (Basel, Switzerland)
|March 12, 2024
PubMed

Keywords:
Al contentGaN-based LDelectron blocking layerelectron leakage

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