Reduction-Induced Magnetic Behavior in LaFeO3-δ Thin Films.
Nathan D Arndt1, Eitan Hershkovitz1, Labdhi Shah1
1Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
Materials (Basel, Switzerland)
|March 13, 2024
Summary
Oxygen reduction in lanthanum ferrite (LaFeO3-δ) thin films creates distinct magnetic states. Different substrate preparation methods influence oxygen loss and magnetic properties, showing potential for multistate memory applications.
Area of Science:
- Materials Science
- Solid State Physics
- Thin Film Technology
Background:
- Lanthanum ferrite (LaFeO3-δ) is explored for magnetoionic memory applications.
- Oxygen stoichiometry significantly impacts the magnetic properties of perovskite oxides.
Purpose of the Study:
- To investigate the effect of oxygen reduction on the magnetic properties of LaFeO3-δ thin films.
- To evaluate the potential of LaFeO3-δ for nonvolatile multistate memory devices.
Main Methods:
- Growth of LaFeO3-δ thin films on differently prepared strontium titanate (SrTiO3) substrates (as-received vs. annealed).
- Controlled oxygen reduction of the thin films.
- Characterization of structural and magnetic properties, including remnant magnetization at various temperatures.
Main Results:
- LaFeO3-δ films grown on annealed SrTiO3 lost more oxygen and exhibited decomposed microstructures compared to films on as-received SrTiO3.
- Oxygen-reduced films showed temperature-dependent magnetic behavior, with remnant magnetization persisting up to room temperature in the annealed substrate case.
- Distinct magnetic states were accessed in the same material by varying oxygen reduction levels.
Conclusions:
- Substrate preparation critically influences oxygen loss and magnetic properties of LaFeO3-δ thin films.
- LaFeO3-δ offers a tunable platform for achieving multiple magnetic states through controlled oxygen reduction.
- These findings support LaFeO3-δ as a promising material for advanced nonvolatile multistate memory technologies.
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