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Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
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Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO3 Devices.
Víctor Álvarez-Martínez1,2, Rafael Ramos1,2, Víctor Leborán1
1Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS), Universidade de Santiago de Compostela, 15782 Santiago de Compostela, Spain.
ACS Applied Materials & Interfaces
|March 13, 2024
Summary
Researchers discovered a thermal resistive switching effect in oxide memristors. Changes in oxygen vacancies alter thermal boundary resistance, offering new insights into memristor operation and oxide ion dynamics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Oxide-based memristive devices utilize electric-field-induced oxygen vacancy dynamics for memory applications.
- Understanding interfacial phenomena is crucial for optimizing memristor performance.
Purpose of the Study:
- To investigate the relationship between oxygen vacancy concentration and thermal boundary resistance (TBR) at the metal-oxide interface.
- To demonstrate a thermal resistive switching effect in memristive devices.
Main Methods:
- Utilized frequency domain thermoreflectance (FDTR) to measure interfacial TBR in (Pt,Cr)/SrTiO3 devices.
- Performed time-dependent thermal relaxation experiments to analyze ionic rearrangement.
Main Results:
- Observed a reversible change in interfacial TBR of approximately 20% during SET/RESET operations.
- Evidence suggests widespread ionic rearrangement at the metal/oxide interface, distinct from the conductive filament.
Conclusions:
- The study reveals a novel thermal resistive switching mechanism linked to oxygen vacancy modulation.
- Findings provide valuable insights into oxide ion dynamics in redox-based memristive devices, impacting future device design.
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