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Related Concept Videos

Semiconductors01:22

Semiconductors

696
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Carrier Generation and Recombination01:22

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Updated: Jun 30, 2025

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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Cavity-coupled telecom atomic source in silicon.

Adam Johnston1,2, Ulises Felix-Rendon1,2, Yu-En Wong1,2

  • 1Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA.

Nature Communications
|March 16, 2024
PubMed
Summary
This summary is machine-generated.

Researchers enhanced T centers in silicon for quantum networks by integrating them with photonic crystal cavities. This boosts zero phonon line (ZPL) emission, improving spin-photon interfaces for quantum information processing.

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Area of Science:

  • Quantum Information Science
  • Materials Science
  • Optics and Photonics

Background:

  • T centers in silicon offer promising telecom band optical transitions and long-lived spins for quantum networking.
  • A key challenge is improving the weak and slow zero phonon line (ZPL) emission of T centers.

Purpose of the Study:

  • To enhance the fluorescence decay rate and photon outcoupling efficiency of single T centers.
  • To develop efficient T center spin-photon interfaces for quantum information processing and networking.

Main Methods:

  • Integration of single T centers with a low-loss, small mode-volume silicon photonic crystal cavity.
  • Characterization of fluorescence decay rate and ZPL photon outcoupling rate.
  • Modeling of coupled system dynamics using the Lindblad master equation.

Main Results:

  • Demonstrated an enhancement of the fluorescence decay rate by a factor of 6.89.
  • Achieved an average ZPL photon outcoupling rate of 73.3 kHz under saturation, two orders of magnitude higher than previous reports.
  • Successfully modeled the coupled system dynamics.

Conclusions:

  • The integration with photonic crystal cavities significantly enhances T center emission.
  • This work represents a substantial advancement towards efficient T center spin-photon interfaces.
  • The findings pave the way for practical quantum networking and information processing applications.