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Simulation of the resistance switching performance and synaptic behavior of TiO2-based RRAM devices with CoFe2O4

Fei Yang1, Bo Hu1, Zijian He1

  • 1School of Integrated Circuits, Anhui University, Hefei 230601, China. feiyang-0551@163.com.

Nanoscale
|March 18, 2024
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