Related Experiment Video
Updated: May 23, 2025

09:49
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
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Correction: Simulation of the resistance switching performance and synaptic behavior of TiO2-based RRAM devices with
1School of Integrated Circuits, Anhui University, Hefei 230601, China. feiyang-0551@163.com.
Nanoscale
|March 12, 2025
Abstract:
Correction for 'Simulation of the resistance switching performance and synaptic behavior of TiO2-based RRAM devices with CoFe2O4 insertion layers' by Fei Yang et al., Nanoscale, 2024, 16, 6729-6738, https://doi.org/10.1039/D3NR05935A.
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