Related Experiment Video
Updated: Jun 20, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Strain-Enhanced Large-Area Monolayer MoS2 Photodetectors
Borna Radatović1,2, Onur Çakıroğlu2, Valentino Jadriško1,3
1Center for Advanced Laser Techniques, Institute of Physics, Bijenička 46, 10000 Zagreb, Croatia.
Abstract:
In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS2 monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS2 for further functionalization and utilization of different flexible sensors.

