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Transmission Electron Microscopy

Transmission Electron Microscopy

In 1931, physicist Ernst Ruska—building on the idea that magnetic fields can direct an electron beam just as lenses can direct a beam of light in an optical microscope—developed the first prototype of the electron microscope. This development led to the development of the field of electron microscopy. In the transmission electron microscope (TEM), electrons are produced by a hot tungsten element and accelerated by a potential difference in an electron gun, which gives them up to 400...

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Multi-Stimuli Operando Transmission Electron Microscopy for Two-Terminal Oxide-Based Devices.

Oscar Recalde-Benitez¹, Yevheniy Pivak², Robert Winkler¹

¹Advanced Electron Microscopy Division, Institute of Materials Science, Department of Materials and Geosciences, Technische Universität Darmstadt, Peter-Grünber-strasse 2, Darmstadt 64287, Germany.

Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada

|March 25, 2024

Summary

Microelectromechanical systems (MEMS) chips enable in situ transmission electron microscopy (TEM) studies of nanoelectronic devices. A novel technique reveals reoxidation decreases leakage current in memristors and capacitors after ion/electron bombardment.

Keywords:

in situ TEM FIB MEMS nanocell reactor nanoelectronics plasma cleaning

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Writing and Low-Temperature Characterization of Oxide Nanostructures

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Published on: July 18, 2014

Area of Science:

Materials Science
Nanoscience
Electrical Engineering

Background:

In situ transmission electron microscopy (TEM) with microelectromechanical systems (MEMS) chips offers advanced nanoelectronic device analysis.
Controlling multiple stimuli within a TEM environment for device operation is a significant challenge.

Purpose of the Study:

To investigate the impact of multi-stimuli application on the electrical performance of TEM lamella devices.
To develop and validate a technique for approximating macroscale leakage current measurements in TEM lamellae.

Main Methods:

Integration of MEMS-based chips with in situ TEM gas cells for biasing experiments.
Development of a post-focused ion beam (FIB) healing technique for leakage current approximation.
Exposure of SrTiO3-based memristors and BaSrTiO3-based tunable capacitors to ion and electron bombardment in oxygen-rich environments.

Main Results:

A reoxidation process was observed in SrTiO3 and BaSrTiO3 devices.
Ion and electron bombardment in oxygen-rich environments led to a decrease in leakage current.
Successful demonstration of multi-stimuli TEM experiments on metal-insulator-metal devices.

Conclusions:

The developed technique enables in situ electrical characterization of nanoelectronic devices under various stimuli.
Reoxidation is a key factor influencing leakage current in these materials under specific bombardment conditions.
This work paves the way for advanced multi-stimuli TEM studies of complex electronic devices.