Enhancing Stability and Performance in Tin-Based Perovskite Field-Effect Transistors Through Hydrogen Bond...

Ion migration poses a substantial challenge in perovskite transistors, exerting detrimental effects on hysteresis and operational stability. This study focuses on elucidating the influence of ion migration on the performance of tin-based perovskite field-effect transistors (FETs). It is revealed that the high background carrier density in FASnI₃ FETs arises not only from the oxidation of Sn²⁺ but also from the migration of FA⁺ ions. The formation of hydrogen bonding between FA⁺ and F^- ions efficiently inhibits ion migration, leading to a reduction in background carrier density and an improvement in the operational stability of the transistors. The strategy of hydrogen bond is extended to fluorine-substituted additives to improve device performance. The incorporation of 4-fluorophenethylammonium iodide additives into FETs significantly minimizes the shift of turn-on voltage during cyclic measurements. Notably, an effective mobility of up to 30 cm² V^-1 s^-1 with an I_on/off ratio of 10⁷ is achieved. These findings hold promising potential for advancing tin-based perovskite technology in the field of electronics.