Regulating Growth Kinetics of Tin-Based Perovskites via Ionic Liquid Additives for High-Performance Field-Effect...

Area of Science:

• Materials Science
• Semiconductor Physics
• Nanotechnology

Background:

• Tin-based perovskites are promising semiconductor materials for field-effect transistor (FET) channels.
• Rapid crystallization of these perovskites leads to low-quality films, especially for thin layers in transistors.
• Controlling film quality is crucial for advancing perovskite transistor technology.

Purpose of the Study:

• To investigate the use of ionic liquids to regulate the crystallization kinetics of tin-based perovskites.
• To improve the film quality and performance of tin-based perovskite field-effect transistors.
• To explore the dual role of ionic liquids in controlling perovskite growth.

Main Methods:

• Utilized ionic liquids with varying concentrations and coordination abilities.
• Analyzed the effect of ionic liquids on perovskite crystallization rate and nucleation density.
• Fabricated and characterized tin-based perovskite field-effect transistors incorporating ionic liquid additives.

Main Results:

• Ionic liquids effectively slowed the growth rate of tin-based perovskites while increasing nucleation sites.
• Achieved smooth, pinhole-free perovskite films with preferred orientation, even from low-concentration solutions.
• Optimized transistors with propylammonium acetate showed a maximum carrier mobility of 30.6 cm² V⁻¹ s⁻¹ and excellent operational stability.

Conclusions:

• Ionic liquids play a critical role in fabricating high-quality tin-based perovskite films.
• The dual function of ionic liquids (slowing growth, enhancing nucleation) is key to improved film morphology.
• This approach offers a promising route for developing stable and high-performance perovskite transistors.