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Non-ohmic Devices00:51

Non-ohmic Devices

1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.1K
Semiconductors01:22

Semiconductors

695
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
695
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

333
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
333
Types of Semiconductors01:20

Types of Semiconductors

591
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
591
MOSFET01:16

MOSFET

467
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
467
Characteristics of MOSFET01:17

Characteristics of MOSFET

373
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
373

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Related Experiment Video

Updated: Jun 29, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
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Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

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Resistive Switching Devices for Neuromorphic Computing: From Foundations to Chip Level Innovations.

Kannan Udaya Mohanan1

  • 1Department of Electronic Engineering, Gachon University, Seongnam-si 13120, Gyeonggi-do, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|March 27, 2024
PubMed
Summary

Resistive random-access memory (RRAM) devices show promise for neuromorphic computing, mimicking brain functions with their compact size and low energy use. This review explores RRAM materials, mechanisms, and applications in brain-inspired computing.

Keywords:
deep learningmemristorneuromorphic chipneuromorphic computingneuronresistive switchingsynapse

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Area of Science:

  • Materials Science
  • Computer Engineering
  • Neuroscience

Background:

  • Neuromorphic computing addresses growing data demands with brain-inspired architectures.
  • Resistive random-access memory (RRAM) devices emulate neuronal behaviors, offering advantages like compactness and low power consumption.

Purpose of the Study:

  • This review comprehensively analyzes RRAM devices for brain-inspired computing.
  • It covers biological concepts, RRAM switching behaviors, physical mechanisms, materials, and applications.

Main Methods:

  • Literature review of RRAM devices and neuromorphic applications.
  • Analysis of resistive switching behaviors and underlying physical mechanisms.
  • Discussion of various material choices and benchmark results.

Main Results:

  • RRAM devices exhibit diverse resistive switching behaviors and mechanisms.
  • Various materials are suitable for RRAM, with recent research showing promising benchmark results.
  • Emerging trends and state-of-the-art results in RRAM-based neuromorphic applications are highlighted.

Conclusions:

  • RRAM devices are crucial for advancing neuromorphic computing.
  • The review provides insights into RRAM materials, mechanisms, applications, challenges, and future outlook.
  • It summarizes key findings and identifies salient research results for commercial chip-level applications.