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Field Effect Transistor01:29

Field Effect Transistor

399
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
399
Biasing of FET01:22

Biasing of FET

269
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
269
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

351
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
351
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

333
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
333
MOSFET01:16

MOSFET

467
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
467
Characteristics of MOSFET01:17

Characteristics of MOSFET

373
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
373

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Related Experiment Video

Updated: Jun 29, 2025

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

602

Doping-Less Feedback Field-Effect Transistors.

Hakin Kim1, Doohyeok Lim1,2

  • 1Department of Nano Electronic Convergence Engineering, Kyonggi University, Suwon 16227, Gyeonggi-do, Republic of Korea.

Micromachines
|March 28, 2024
PubMed
Summary
This summary is machine-generated.

We developed novel doping-less feedback field-effect transistors (DLFBFETs) using intrinsic semiconductor bodies. These transistors offer excellent performance, including a high on/off ratio and steep switching, without requiring dopants.

Keywords:
charge plasmadoping-less devicefeedback field-effect transistor

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Area of Science:

  • Semiconductor device physics
  • Materials science

Background:

  • Traditional field-effect transistors often rely on complex doping processes.
  • Charge plasma phenomena can enable doping-less transistor operation.

Purpose of the Study:

  • To propose and characterize novel doping-less feedback field-effect transistors (DLFBFETs).
  • To demonstrate a simplified fabrication process for these devices.

Main Methods:

  • Fabrication of 5 nm thick intrinsic semiconductor bodies with dual gates.
  • Utilizing charge plasma phenomena for virtual doping via electrodes and gate biases.
  • Applying gate voltages to control device operation modes (diode or FBFET).

Main Results:

  • DLFBFETs fabricated via a simple metal-silicon contact process without doping.
  • Demonstrated tunable operation in diode or feedback field-effect transistor (FBFET) modes.
  • Achieved an on/off current ratio of approximately 10^4 and steep switching characteristics (~1 mV/decade) in FBFET mode.

Conclusions:

  • Doping-less feedback field-effect transistors (DLFBFETs) can be fabricated using a simplified process.
  • Positive feedback mechanisms in DLFBFETs enable high performance without dopants.
  • These devices offer a promising alternative for future electronic applications.