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Updated: Jun 29, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Constructing an Al3+/Zn2+-Based Solid Electrolyte Interphase to Enable Extraordinarily Stable Al3+-Based
Shichen Weng1,2, Zhenhu Cao3, Kunrun Song1,2
1Faculty of Maritime and Transportation, Ningbo University, Ningbo 315211, China.
Abstract:
The interface between the electrochromic (EC) electrode and ionic conductor is crucial for high-performance and extraordinarily stable EC devices (ECDs). Herein, the effect of the ALD-AZO interfacial layer on the performance of the WO3 thin film was examined, revealing that an introduction of the ALD-AZO interfacial layer to the Al3+-based complementary ECDs can lead to improved EC performance and stability, such as an extraordinary cyclability of more than 20,000 cycles, an outstanding coloration efficiency of 109.69 cm2 C-1, and a maximum transmittance modulation of 63.44%@633 nm. The probable explanation is that the introduced ALD-AZO interfacial layer can effectively regulate the band gap of WO3, promote the electron transport process, and induce the formation of a robust solid electrolyte interphase to protect the electrode during cycling. These findings offer valuable insights for enhancing the EC performance of the EC thin films and new space for the construction of advanced multivalent Al3+-based ECDs.
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