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Temperature-transferable tight-binding model using a hybrid-orbital basis.

Martin Schwade1, Maximilian J Schilcher1, Christian Reverón Baecker1

  • 1Physics Department, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching, Germany.

The Journal of Chemical Physics
|April 1, 2024
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Summary
This summary is machine-generated.

We developed a physics-informed tight-binding model for efficient, accurate semiconductor property calculations at finite temperatures. This approach minimizes parameters and improves temperature transferability, outperforming previous methods.

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Area of Science:

  • Materials Science
  • Computational Physics
  • Condensed Matter Physics

Background:

  • Finite-temperature calculations are crucial for understanding material properties but are computationally intensive.
  • Existing methods like tight-binding and machine learning struggle with temperature transferability and data efficiency.
  • Accurate modeling of temperature-dependent electronic properties remains a significant challenge.

Purpose of the Study:

  • To develop a novel tight-binding model for efficient and accurate computation of temperature-dependent semiconductor properties.
  • To enhance the temperature transferability of electronic structure models in a data-efficient manner.
  • To provide a computationally feasible alternative to expensive first-principles calculations for materials at elevated temperatures.

Main Methods:

  • Developed a physics-informed tight-binding model using hybrid-orbital basis functions.
  • Numerically integrated atomic orbitals to determine distance-dependent matrix elements.
  • Optimized model parameters using density functional theory and tested with molecular dynamics simulations.

Main Results:

  • The proposed tight-binding model requires a minimal set of parameters, easily optimized.
  • The model demonstrates good temperature transferability when applied to molecular dynamics trajectories without explicit temperature fitting.
  • Accurate prediction of electronic properties at elevated temperatures for gallium arsenide was achieved, with thermal expansion effects on onsite terms being crucial.

Conclusions:

  • The developed tight-binding model offers an efficient and accurate approach for calculating temperature-dependent properties of semiconductors.
  • Physics-informed design, particularly incorporating thermal expansion, is key for achieving high accuracy at elevated temperatures.
  • This method presents a promising avenue for accelerating materials discovery and design by reducing computational costs.