Ferroelectric Domain Wall Delayer and Low-Dropout Regulator

Area of Science:

• Materials Science
• Nanotechnology
• Electrical Engineering

Background:

• Accurate and stable power converters are complex in system-on-chip power management integrated circuits (PMICs) due to area constraints.
• Existing solutions struggle with line/load variations and power supply ripple in integrated systems.

Purpose of the Study:

• To develop novel multifunctional nanodevices for advanced integrated circuit applications.
• To investigate the potential of domain wall (DW) nanodevices for compact and efficient power management and signal processing.

Main Methods:

• Fabrication of domain wall (DW) nanodevices using X-cut LiNbO3 thin film on silicon.
• Characterization of domain switching dynamics and output current behavior under applied voltage.
• Development of a wall-current-limited domain switching model.

Main Results:

• Domain switching occurred after a delay, predictable by Merz's law.
• Output current was independent of applied voltage but adjustable via wall width and input resistance.
• Repetitive regulating currents were observed across interfacial domains under intermittent voltages.

Conclusions:

• Multifunctional DW nanodevices offer compact solutions for PMICs, potentially serving as low-dropout regulators.
• These devices are suitable for time-domain delayers in neural networks and on-chip electrostatic discharge protection.
• The developed nanodevices present a versatile platform for nonvolatile memories, selectors, and other integrated circuit components.