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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

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A Multistate Non-Volatile Photoelectronic Memory Device Based on Ferroelectric Tunnel Junction with Modulable Visible

Zhuokun Han¹, Yu Chang¹, Bingcheng Luo¹

¹School of Physical Science and Technology, MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an 710072, P.R. China.

ACS Applied Materials & Interfaces

|April 3, 2024

Summary

This study introduces a novel ferroelectric tunnel junction (FTJ) using amorphous selenium. This device shows visible light photoresponse and multistate memory, advancing photoelectronic memory technology.

Keywords:

PZT ferroelectrics multistate memory photoresponse modulation tunneling electroresistance visible photodetector

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Published on: May 13, 2020

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Ferroelectric tunnel junctions (FTJs) show polarization-dependent photoresponse and tunneling electroresistance (TER).
Existing FTJs often have limited ultraviolet photoresponse.
Reading polarization states via photocurrent is a key challenge.

Purpose of the Study:

To fabricate and characterize a novel amorphous selenium (a-Se)/PbZr_0.2Ti_0.8O₃ (PZT)/Nb-doped SrTiO₃ (NSTO) heterojunction.
To investigate its self-powered visible light photoresponse modulated by ferroelectric polarization.
To demonstrate multistate information storage with nondestructive readout.

Main Methods:

Fabrication of a-Se/PZT/NSTO heterojunction.
Measurement of tunneling electroresistance (TER) and photocurrent.
Modulation of photocurrent by ferroelectric polarization states.

Main Results:

Achieved a high TER of 3 × 10⁶.
Demonstrated self-powered visible light photoresponse.
Observed a 1200% increase in photocurrent modulated by polarization voltages.
Successfully designed multistate information storage with nondestructive readout.

Conclusions:

The novel a-Se/PZT/NSTO heterojunction enables visible light-driven photoelectronic memory.
Ferroelectric polarization effectively modulates photocurrent for data storage.
This work expands FTJ design for high-density photoelectronic memory applications.