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Narrow linewidth laser based on a sidewall grating active distributed Bragg reflector.

Meng-Wei Sheng, You-Zeng Hao, Wei Wang

    Optics Express
    |April 4, 2024
    PubMed
    Summary

    We developed a novel semiconductor laser using a deep-etched sidewall grating active distributed Bragg reflector (SG-ADBR). This laser achieves a narrow linewidth of 288 kHz, crucial for advanced optical applications.

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    Area of Science:

    • Photonics and Semiconductor Lasers
    • Optical Engineering
    • Materials Science

    Background:

    • Semiconductor lasers are fundamental to modern optical communication and sensing.
    • Achieving narrow linewidths and wide tuning ranges in semiconductor lasers remains a key challenge.
    • Active distributed Bragg reflectors (ADBRs) offer a promising approach for laser design.

    Purpose of the Study:

    • To demonstrate a narrow linewidth semiconductor laser.
    • To investigate the performance of deep-etched sidewall grating active distributed Bragg reflectors (SG-ADBRs).
    • To achieve high side-mode suppression ratio (SMSR) and wide continuous tuning range.

    Main Methods:

    • Numerical simulation using the finite element method to determine coupling coefficients and reflectance of SG-ADBRs.

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  • Fabrication of fifth-order SG-ADBR lasers using projection i-line lithography.
  • Characterization of lasing performance, including wavelength, SMSR, tuning range, and frequency noise power spectral density.

    • Main Results:

    • A reflectance of 0.86 with a 1.04 nm bandwidth was simulated for a 500-period SG-ADBR.
    • Single-mode lasing at 1537.9 nm with an SMSR of 65 dB was achieved.
    • A continuous tuning range of 10.3 nm with SMSRs > 53 dB was verified.
    • A Lorentzian linewidth of 288 kHz was obtained from frequency noise characterization.

    Conclusions:

    • Deep-etched SG-ADBRs are effective for creating narrow linewidth semiconductor lasers.
    • The fabricated lasers exhibit excellent single-mode performance and wide tunability.
    • This technology holds potential for applications requiring high-performance lasers.