Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Multimachine Stability01:25

Multimachine Stability

151
Multimachine stability analysis is crucial for understanding the dynamics and stability of power systems with multiple synchronous machines. The objective is to solve the swing equations for a network of M machines connected to an N-bus power system.
In analyzing the system, the nodal equations represent the relationship between bus voltages, machine voltages, and machine currents. The nodal equation is given by:
151
Simplified Synchronous Machine Model01:30

Simplified Synchronous Machine Model

220
The Synchronous Machine Model is a fundamental tool in analyzing and ensuring the transient stability of power systems. This model simplifies the representation of a synchronous machine under balanced three-phase positive-sequence conditions, assuming constant excitation and ignoring losses and saturation. The model is pivotal for understanding the behavior of synchronous generators connected to a power grid, particularly during transient events.
In this model, each generator is connected to a...
220
MOS Capacitor01:25

MOS Capacitor

772
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
772

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Bacteriophages hijack 2',3'-cNMPs to enhance transposase-mediated phage DNA integration in <i>Acinetobacter baumannii</i>.

Science advances·2026
Same author

Charge density wave in a band insulator.

Nature communications·2026
Same author

Laser-Induced Spin-Lattice Coupling and the Emergence of Ferrimagnetic State in Kagome Metal RbV<sub>3</sub>Sb<sub>5</sub>.

ACS nano·2026
Same author

Resistive memory-based neural differential equation solver for score-based diffusion model.

Nature communications·2026
Same author

Ultrathin and ultrastrong hydrogel bioelectronic membranes.

National science review·2026
Same author

All-Optical Steering of Competing Topological Pathways in ZrTe<sub>5</sub>.

Nano letters·2026
Same journal

Formation of Bimetallic Nanoparticles via Exsolution Using a Reducible Metal Oxide Capping Layer.

ACS nano·2026
Same journal

Cold-Driven Thermoelectric Patch for Postoperative Tumor Control.

ACS nano·2026
Same journal

Chemically Fueled Interfacial Supramolecular Polymerization.

ACS nano·2026
Same journal

Tactile Neuromorphic Ion-Gated Vertical Transistor Displays Enabling Dual-Output Reservoir Computing.

ACS nano·2026
Same journal

In Situ Oxygen Shuttling within a Bilayer Electrified Membrane Enables Aeration-Free Electro-Fenton Water Purification.

ACS nano·2026
Same journal

Single Atoms as Growth Directors: From Graphene Edges to Atomically Precise Interfaces in 2D Materials.

ACS nano·2026
See all related articles

Related Experiment Video

Updated: Jun 28, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.8K

Oscillatory Neural Network-Based Ising Machine Using 2D Memristors.

Xi Chen1,2, Dongliang Yang1, Geunwoo Hwang3

  • 1Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.

ACS Nano
|April 10, 2024
PubMed
Summary
This summary is machine-generated.

Two-dimensional memristors enable neural networks to solve complex optimization problems. This research demonstrates their use in Hopfield and Ising machines for enhanced computational efficiency.

Keywords:
Ising machinecombinatorial optimizationcrossbar arrayin-memory computingmemristor

More Related Videos

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

8.9K
Interfacing 3D Engineered Neuronal Cultures to Micro-Electrode Arrays: An Innovative In Vitro Experimental Model
09:47

Interfacing 3D Engineered Neuronal Cultures to Micro-Electrode Arrays: An Innovative In Vitro Experimental Model

Published on: October 18, 2015

10.0K

Related Experiment Videos

Last Updated: Jun 28, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.8K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

8.9K
Interfacing 3D Engineered Neuronal Cultures to Micro-Electrode Arrays: An Innovative In Vitro Experimental Model
09:47

Interfacing 3D Engineered Neuronal Cultures to Micro-Electrode Arrays: An Innovative In Vitro Experimental Model

Published on: October 18, 2015

10.0K

Area of Science:

  • Materials Science
  • Computer Science
  • Electrical Engineering

Background:

  • Neural networks are vital for optimization but face computational challenges with NP-hard problems.
  • Traditional hardware confronts limitations like the von Neumann bottleneck and Moore's Law slowdown.
  • Two-dimensional (2D) memristors offer in-memory computing and scalability, addressing hardware constraints.

Purpose of the Study:

  • To investigate the application of 2D memristors in neural network architectures for optimization.
  • To explore the potential of 2D memristors in solving both continuous and combinatorial optimization problems.
  • To develop an oscillatory neural network-based Ising machine using memristors for advanced computation.

Main Methods:

  • Emulating synapses with nonvolatile 2D memristors in a discrete-time Hopfield neural network.
  • Coupling volatile memristor-based oscillators with nonvolatile memristor synapses for an Ising machine.
  • Utilizing phase synchronization in the oscillatory neural network for problem-solving.

Main Results:

  • Successfully solved continuous optimization problems like quadratic polynomial minimization using the Hopfield network.
  • Tackled combinatorial optimization problems such as Max-Cut with the Hopfield network.
  • Demonstrated the Ising machine's capability to solve Max-Cut and map coloring problems via phase synchronization.

Conclusions:

  • 2D memristors show significant potential for enhancing the efficiency, compactness, and homogeneity of integrated Ising machines.
  • This work highlights the promise of 2D memristors for future neural network advancements in optimization.
  • Memristor-based neural networks offer a viable hardware solution for computationally intensive optimization tasks.