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Updated: Jun 28, 2025

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Published on: August 15, 2018
Phase-Dependent Magnetic Proximity Modulations on Valley Polarization and Splitting
Jin'an Li1, Zilong Chen1, Jiangpeng Zhou1
1Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China.
Magnetic interactions in 2D materials like VSe2 heterostructures enable precise control of electron valley properties. Different VSe2 phases offer distinct advantages for valleytronics at various temperatures and magnetic fields.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Information Science
Background:
- Valley degrees of freedom in transition metal dichalcogenides offer a platform for novel electronic devices.
- Magnetic proximity effects are explored to manipulate these valley properties.
Purpose of the Study:
- To investigate the phase-dependent magnetic proximity effects in VSe2/WX2 heterostructures.
- To modulate valleytronic properties using different phases of VSe2.
Main Methods:
- Fabrication of 1T-VSe2/WX2 and 2H-VSe2/WX2 heterostructures.
- Experimental characterization of valley polarization and splitting.
- First-principles calculations to elucidate magnetic proximity mechanisms.
Main Results:
- 1T-VSe2/WX2 heterostructures show improved room-temperature valley polarization.
- 2H-VSe2/WX2 heterostructures exhibit superior low-temperature performance and magnetic field sensitivity.
- Significant valley splitting with a large g_eff factor observed in 2H-VSe2/WS2.
Conclusions:
- Phase-dependent magnetic proximity mechanisms, including interfacial charge transfer (1T-VSe2) and exchange field (2H-VSe2), govern valleytronic modulation.
- Effective control of valley degrees of freedom is achieved, paving the way for valley quantum applications.
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