Nonvolatile Reconfigurable Logic Device Based on Photoinduced Interfacial Charge Trapping in van der Waals Gap

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanoelectronics

Background:

• Miniaturization of electronic devices necessitates advanced components like reconfigurable field-effect transistors (RFETs).
• Existing RFETs face challenges in device performance, symmetric n-type and p-type transport, and long-term stability.
• Achieving polarity control typically requires multiple gate electrodes, increasing device complexity.

Purpose of the Study:

• To develop a nonvolatile WSe2-based RFET with single-gate polarity control.
• To address limitations in current RFETs regarding performance, symmetry, and stability.
• To demonstrate the potential of this new RFET design for integrated circuits.

Main Methods:

• Fabrication of a WSe2-based RFET utilizing photoassisted interfacial charge trapping at the h-BN/SiO2 interface.
• Implementation of a single operating gate activated by white-light exposure for polarity control.
• Characterization of threshold voltage tunability and device performance under varying conditions.

Main Results:

• The developed RFET achieved polarity control using a single gate, activated solely by white-light exposure.
• Tunable threshold voltages ranged from -31.6 V to +19.5 V, enabling selective n-type or p-type operation at VGS = 0 V.
• Demonstrated superior repeatability and long-term stability for the WSe2-based RFETs.
• Successfully implemented various reconfigurable logic circuits, including inverters and switch circuits.

Conclusions:

• The novel WSe2-based RFET offers a simplified approach to polarity control using light.
• The device exhibits excellent performance, stability, and repeatability, suitable for advanced electronic applications.
• This technology holds significant potential for future integrated circuit advancements.