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Field-Free Spin-Orbit Torque Magnetization Switching in a Perpendicularly Magnetized Semiconductor (Ga,Mn)As Single
Miao Jiang1,2, Xinyuan Yang3, Shengyuan Qu1
1School of Materials Science and Engineering, Beijing Institute of Technology, Haidian, Beijing 100081, P. R. China.
ACS Applied Materials & Interfaces
|April 25, 2024
Summary
Field-free magnetization switching was achieved in a single (Ga,Mn)As layer using spin-orbit torque (SOT). This breakthrough eliminates the need for external magnetic fields, paving the way for more scalable SOT-MRAM devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Current-induced spin-orbit torque (SOT) enables magnetization switching at low current densities.
- Conventional SOT requires an external magnetic field to break symmetry and ensure deterministic switching.
- Field-free SOT switching is crucial for high-density integration and practical application of SOT-MRAM.
Purpose of the Study:
- To achieve field-free SOT magnetization switching in a ferromagnetic single layer.
- To investigate the potential of (Ga,Mn)As as a spin-orbit ferromagnet for SOT applications.
- To elucidate the underlying SOT switching mechanisms in single-layer systems.
Main Methods:
- Utilized spin-orbit torque in a (Ga,Mn)As single layer.
- Engineered tilted anisotropy via non-uniform Mn distribution and substrate tilting.
- Investigated magnetization switching without external magnetic fields.
Main Results:
- Successfully demonstrated field-free SOT magnetization switching in a (Ga,Mn)As single layer.
- Achieved switching by leveraging strong spin-orbit coupling and tilted anisotropy.
- Observed switching without the application of any external magnetic field.
Conclusions:
- Field-free SOT switching is achievable in single-layer spin-orbit ferromagnets like (Ga,Mn)As.
- Internal fields, arising from material properties, can drive deterministic switching.
- This work advances the development of highly efficient and scalable SOT-MRAM technology.
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