Protocol for nanoscale thermal mapping of electronic devices using atomic force microscopy with phase change material

In this protocol, we present a facile nanoscale thermal mapping technique for electronic devices by use of atomic force microscopy and a phase change material Ge₂Sb₂Te₅. We describe steps for Ge₂Sb₂Te₅ thin film coating, Ge₂Sb₂Te₅ temperature calibration, thermal mapping by varying heater power, and thermal mapping by varying heating time. The protocol can be applied for resolving surface temperatures of various operational microelectronic devices with a nanoscale precision. For complete details on the use and execution of this protocol, please refer to Cheng et al.¹.