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Updated: Jun 27, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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A Novel Asymmetric Trench SiC Metal-Oxide-Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction

Yiren Yu1, Zijun Cheng1, Yi Hu1

  • 1School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400030, China.

Micromachines
|April 27, 2024
PubMed

Keywords:
asymmetric trench MOSFETheterojunctionlow cut-in voltagesilicon carbideswitching loss

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