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Enhancing the Carrier Mobility and Bias Stability in Metal-Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO

Xiaoming Huang1, Chen Chen1, Fei Sun1

  • 1College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.

Micromachines
|April 27, 2024
PubMed

Keywords:
ITO/a-IGZO heterojunction TFTsTCAD silvaco simulationconduction band offsetelectrical performance

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