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Updated: May 6, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
J A Dueñas1, A Cobo2, F Galtarossa3
1Departamento de Ingeniería Eléctrica y Centro de Estudios Avanzados en Física, Matemáticas y Computación, Universidad de Huelva, 21007 Huelva, Spain.
This study introduces a new rotation method to enhance energy resolution in silicon strip detectors. This technique improves interstrip energy resolution, enabling particle identification from previously discarded events.
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