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Updated: Jun 27, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Design and performance of GaSb-based quantum cascade detectors
Miriam Giparakis1, Andreas Windischhofer1, Stefania Isceri1
1Institute of Solid State Electronics, TU Wien, Gußhausstraße 25, 1040 Vienna, Austria.
Strain-balanced InAs/AlSb quantum cascade detectors (QCDs) on GaSb substrates show improved performance. Optimized designs achieve high room-temperature responsivity and detectivity for mid-infrared applications.
Area of Science:
- Semiconductor Physics
- Optoelectronics
- Materials Science
Background:
- InAs/AlSb heterostructures offer unique electronic and optical properties for advanced detector applications.
- Strain-balanced growth on GaSb substrates is crucial for achieving high-quality InAs/AlSb heterostructures.
- Quantum Cascade Detectors (QCDs) leverage intersubband transitions for tailored infrared detection.
Purpose of the Study:
- To design and fabricate novel InAs/AlSb quantum cascade detectors (QCDs) on GaSb substrates with enhanced performance.
- To explore strain engineering using submonolayer InSb layers to optimize detector design and material properties.
- To investigate the optical and electrical characteristics of these QCDs across a range of wavelengths.
Main Methods:
- Utilized strain-balanced epitaxy of InAs/AlSb on GaSb substrates with controlled InAs:AlSb ratios.
- Introduced submonolayer InSb layers to engineer strain and achieve lattice-matched conditions for detector design.
- Designed and grew four active regions with varying InAs:AlSb ratios for mid-infrared detection (3.65–5.5 µm).
- Characterized the fabricated QCDs for responsivity, detectivity, and spectral response at room temperature.
Main Results:
- Achieved a room-temperature peak responsivity of 26.12 mA/W and a detectivity of 1.41 × 10^8 Jones for an optimized QCD at 4.3 µm.
- Demonstrated successful strain engineering enabling high InAs:AlSb thickness ratios (up to 2.8:1) for tailored active region designs.
- Observed higher-energy interband signals in the mid- to near-infrared due to type-II alignment and narrow InAs band gap.
Conclusions:
- Strain-balanced InAs/AlSb QCDs on GaSb substrates are a promising platform for high-performance infrared detection.
- Strain engineering with submonolayer InSb is an effective strategy to optimize QCD design and overcome lattice-matching limitations.
- The developed QCDs exhibit excellent room-temperature performance and potential for broadband infrared sensing applications.
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