The design of a linear voltage divider based on metal oxide arresters

Xinyan Xiao1, Yuhao Shi1, Lin Cheng2

  • 1State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China.

Related Concept Videos

Voltage Dividers01:14

Voltage Dividers

In electrical circuits, resistors can be connected in series, sequentially linked one after the other. In a series configuration, the same current flows through each resistor. Ohm's law is a fundamental principle to understand the behavior of resistors in series. It expresses the voltage across these resistors in terms of the current and resistance.
Kirchhoff's voltage law implies that the sum of the voltages across the resistors in series equals the source voltage. This means that the...
509
Voltage Doubler Circuit01:23

Voltage Doubler Circuit

A voltage doubler circuit integrates two main components: a clamping section and a rectifier section. The clamping section consists of a capacitor (C1) and a diode (D1), whereas the rectifier section is equipped with another diode (D2) and capacitor (C2). This circuit produces an output voltage with twice the amplitude of the sinusoidal input voltage.
560
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
253
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
347
Line Protection with Impedance Relays01:27

Line Protection with Impedance Relays

Coordinating time-delay overcurrent relays in complex radial systems and directional overcurrent relays in multi-source transmission loops can be challenging. Impedance relays address these issues by responding to the voltage-to-current ratio, specifically measuring the apparent impedance of a line. These relays become more sensitive during faults as current increases and voltage decreases, thereby reducing the apparent impedance.
Under normal conditions, low load currents keep the measured...
79
Design Example: Resistive Touchscreen01:14

Design Example: Resistive Touchscreen

A device engineer plays a crucial role in designing user interfaces for mobile devices. One such interface is the resistive touchscreen, which fundamentally consists of two metallic layers: a flexible upper layer and a rigid lower layer, separated by a narrow gap. The high resistance between these two layers is a key characteristic of this design.
When a user touches the screen, the two layers make contact at a specific point known as the touchpoint. This contact reduces the resistance between...
306