Eight In. Wafer-Scale Epitaxial Monolayer MoS₂

Area of Science:

• Materials Science
• Nanotechnology
• Condensed Matter Physics

Background:

• High-quality monolayer molybdenum disulfide (MoS2) films are essential for advanced electronics and optoelectronics.
• Epitaxial growth is a key technique for producing high-quality MoS2, with previous demonstrations up to 4-inch wafer scales.

Purpose of the Study:

• To report the epitaxial growth of 8-inch wafer-scale, highly oriented monolayer MoS2 films with excellent spatial homogeneity.
• To demonstrate the fabrication and performance of field-effect transistors (FETs) and logic devices using the large-scale MoS2 films.

Main Methods:

• Utilized a specially designed vertical chemical vapor deposition (VCVD) system for epitaxial growth.
• Grew highly oriented monolayer MoS2 on sapphire substrates at an 8-inch wafer scale.
• Fabricated field-effect transistors (FETs), logic devices, and 11-stage ring oscillators.

Main Results:

• Achieved excellent spatial homogeneity in the 8-inch wafer-scale monolayer MoS2 films.
• Fabricated FETs demonstrated high performance with an average mobility of 53.5 cm2 V-1 s-1 and an on/off ratio of 10^7.
• Successfully demonstrated batch fabrication of logic devices and ring oscillators with excellent electrical functions.

Conclusions:

• The developed VCVD method enables the production of large-scale, high-quality monolayer MoS2 films.
• The high performance of fabricated devices indicates the potential for MoS2 in practical, industry-scale electronic applications.
• This work represents a significant step towards the commercialization of MoS2-based electronics and optoelectronics.