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Room-temperature solution processing of high-mobility MoS2 thin films
Junying Xue1, Tingyi Xia1, Tong Li2,3
1Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, China.
Nature Communications
|November 22, 2025
Summary
Researchers developed a new method for creating molybdenum disulfide (MoS2) thin films at room temperature, overcoming limitations of traditional high-temperature synthesis. This low-cost, solution-based approach enables high-quality films for advanced electronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Chemical vapor deposition (CVD) is standard for high-quality 2D molybdenum disulfide (MoS2) synthesis.
- CVD requires high temperatures (400-900 °C), increasing costs and limiting use with flexible substrates.
Purpose of the Study:
- To develop a low-thermal-budget, solution-based method for synthesizing wafer-scale MoS2 thin films.
- To overcome the trade-off between thermal budget and electrical performance in MoS2 synthesis.
Main Methods:
- Utilized a polymer-free alkylammonium-capped MoS2 ink for solution deposition.
- Employed solvent washing to remove ligands, yielding atomically clean MoS2 films.
- Fabricated and tested MoS2 thin films processed at room temperature and 200 °C.
Main Results:
- Achieved wafer-scale MoS2 thin films with high electron mobility (50 cm²/V·s at room temperature, 68 cm²/V·s at 200 °C).
- Demonstrated uniform MoS2 transistors suitable for logic integration and driving circuits.
- Fabricated a MoS2 ring oscillator with an oscillation frequency exceeding 300 kHz.
Conclusions:
- The polymer-free ink enables low-temperature synthesis of high-performance MoS2 films.
- This method offers a cost-effective and scalable alternative to CVD for flexible electronics.
- MoS2 thin films show significant potential for functional circuits and layered semiconductor applications.
