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Single-structure 3-axis Lorentz force magnetometer based on an AlN-on-Si MEMS resonator.

Cheng Tu1, Xu-Heng Ou-Yang1, Ying-Jie Wu1

  • 1School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China.

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This study introduces a novel 3-axis Lorentz force magnetometer (LFM) using an AlN-on-Si MEMS resonator. This piezoelectric device achieves sensitive, multi-axis magnetic field detection at ambient pressure.

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Electrical and electronic engineeringElectronic devicesSensors

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Area of Science:

  • Microelectromechanical Systems (MEMS)
  • Sensor Technology
  • Solid-State Physics

Background:

  • Conventional Lorentz force magnetometers (LFMs) often rely on capacitive sensing, which can be limited by parasitic effects and operating conditions.
  • Achieving multi-axis magnetic field sensing in a single, compact device presents significant engineering challenges.

Purpose of the Study:

  • To develop and characterize a single-structure, 3-axis Lorentz force magnetometer (LFM) utilizing a piezoelectric AlN-on-Si MEMS resonator.
  • To demonstrate the capability of measuring magnetic fields along three orthogonal axes using distinct mechanical vibration modes within a single device.
  • To present a novel equivalent circuit model for accurate analysis and separation of Lorentz force effects.

Main Methods:

  • Fabrication of a single-structure AlN-on-Si MEMS resonator.
  • Excitation of an out-of-plane drum-like mode (277 kHz) for x- and y-axis magnetic field measurement.
  • Excitation of an in-plane square-extensional mode (5.4 MHz) for z-axis magnetic field measurement.
  • Application of precisely controlled excitation currents for mode actuation and cross-interference suppression.
  • Development and application of a novel equivalent circuit model to distinguish Lorentz force signals from capacitive feedthrough.

Main Results:

  • The piezoelectric LFM successfully measured magnetic fields along x, y, and z axes using dual mechanical modes.
  • Achieved magnetic responsivities of 1.74 ppm/mT (x-axis), 1.83 ppm/mT (y-axis), and 6.75 ppm/mT (z-axis).
  • Demonstrated high sensitivity and good cross-interference immunity among axes, comparable to capacitive LFMs.
  • The equivalent circuit model effectively separated Lorentz force effects from capacitive feedthrough.

Conclusions:

  • The presented piezoelectric AlN-on-Si MEMS LFM offers a viable, high-sensitivity solution for 3-axis magnetic field sensing.
  • The dual-mode operation within a single structure simplifies device design and enhances performance.
  • This technology holds promise for applications requiring compact, sensitive magnetic field measurement at ambient conditions.