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Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VO)/Pt Device
Jiyeon Ryu1, Kitae Park1, Dwipak Prasad Sahu2
1Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea.
ACS Applied Materials & Interfaces
|May 13, 2024
Summary
This study demonstrates forming-free, low-voltage, and high-speed resistive switching in a novel Ag/oxygen-deficient vanadium oxide (VOx)/Pt device. The material
Area of Science:
- Materials Science
- Solid-State Electronics
- Nanotechnology
Background:
- Resistive switching memory devices offer promising nonvolatile memory solutions.
- Achieving forming-free, low-voltage, and high-speed switching remains a key challenge.
- Oxygen-deficient vanadium oxide (VOx) is explored as a switching layer material.
Purpose of the Study:
- To demonstrate forming-free, low-voltage, and high-speed resistive switching.
- To investigate the role of oxygen deficiency in VOx for device performance.
- To explore the potential of this device for nonvolatile memory and in-memory computing.
Main Methods:
- Fabrication of Ag/oxygen-deficient VOx/Pt devices.
- Characterization using DC voltage sweep and pulse measurements.
- Analysis of filament formation and ion migration mechanisms.
Main Results:
- Achieved forming-free switching with low SET (+0.23 V) and RESET (-0.07 V) voltages.
- Demonstrated high endurance (>10^3 cycles) and fast switching (<100 ns).
- Observed a two-step SET process attributed to Ag+ ion accumulation and filament formation.
Conclusions:
- Oxygen-deficient VOx facilitates Ag filament formation, enabling superior switching characteristics.
- The developed device shows potential for high-performance nonvolatile memory applications.
- Facilitated Ag filament formation in substoichiometric VOx is crucial for advanced computing elements.
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