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Enhanced Nonvolatile Electrochemical Random-Access Memory and Artificial Synapse Characteristics through Oxygen

Jimin Han1, Taeyun Noh2, Boyoung Jeong2

  • 1Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea.

ACS Applied Materials & Interfaces
|June 15, 2025
PubMed

Keywords:
artificial synapsenonvolatile memoryoxygen ion exchange, thin-film transistor, atomic layer depositionoxygen ion-based electrochemical random-access memory

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