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Architecture for Surface-Emitting Lasers with On-Demand Lasing Wavelength by Nanowire Optical Cavities
Mohammad Fazel Vafadar1, Songrui Zhao1
1Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
ACS Nano
|May 20, 2024
Summary
This study demonstrates surface-emitting (SE) semiconductor lasers with tunable wavelengths on demand. Researchers achieved ultralow threshold SE ultraviolet (UV) lasing using III-nitride nanowire cavities, paving the way for versatile laser applications.
Area of Science:
- Semiconductor laser technology
- Nanophotonics
- Materials science
Background:
- Surface-emitting (SE) semiconductor lasers offer significant advantages but are limited by wavelength choices.
- Developing SE lasers in the ultraviolet (UV) spectral range lags behind other wavelengths, despite potential applications.
Purpose of the Study:
- To demonstrate a method for achieving SE lasers with on-demand lasing wavelengths.
- To address the need for SE lasers in the UV spectral range for applications like solar-blind optical wireless communications.
Main Methods:
- Utilizing III-nitride nanowire optical cavities fabricated via low-temperature selective area epitaxy (SAE).
- Fine-tuning substrate patterns and photonic bands to control lasing wavelength.
- Achieving lasing through optical pumping and direct electric current injection.
Main Results:
- Demonstrated ultralow threshold, wavelength-tunable SE UV lasing.
- Successfully achieved SE UV lasing under direct electric current injection.
- Showcased the potential for on-demand wavelength SE lasers from near-infrared (NIR) to UV.
Conclusions:
- This work represents a significant advancement in SE UV laser development.
- The demonstrated approach enables SE lasers with precisely controlled, on-demand lasing wavelengths.
- The findings lay the foundation for a new generation of versatile SE lasers across a broad spectral range.

