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Carrier Generation and Recombination

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

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Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave

Monisha Ghosh^1,2, Shilpi Bhattacharya Deb³, Aritra Acharyya⁴

¹Department of Electronics and Communication Engineering, Supreme Knowledge Foundation Group of Institutions, Mankundu, Chandannagar 712139, India.

Nanomaterials (Basel, Switzerland)

|May 24, 2024

Summary

We developed novel AlGaN/GaN multi-quantum well (MQW) impact avalanche transit time (IMPATT) diodes for high-power terahertz (THz) generation. These diodes achieve 300 mW power and 13% efficiency at 1.0 THz, outperforming existing THz sources.

Keywords:

AlGaN GaN IMPATT SDR Schottky barrier edge-termination multi-quantum well terahertz

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Area of Science:

Semiconductor Physics
Terahertz (THz) Technology
Materials Science

Background:

High-power terahertz (THz) wave generation is crucial for advanced applications.
Traditional impact avalanche transit time (IMPATT) diodes face limitations in power output and efficiency.
AlGaN/GaN material systems offer potential for high-frequency electronic devices.

Purpose of the Study:

To propose and investigate novel edge-terminated single-drift region (SDR) multi-quantum well (MQW) IMPATT diodes for enhanced THz generation.
To explore both p-junction and Schottky barrier diode configurations within the Al0.3Ga0.7N/GaN/Al0.3Ga0.7N material system.
To improve reverse breakdown characteristics and overall THz performance.

Main Methods:

Utilized mesa etching and nitrogen ion implantation for edge termination to enhance breakdown voltage.
Employed a self-consistent quantum drift-diffusion (SCQDD) model for comprehensive steady-state and high-frequency characterization.
Simulated Al0.3Ga0.7N/GaN/Al0.3Ga0.7N MQW diodes and compared them with GaN-SDR and 3C-SiC/Si/3C-SiC MQW-based double-drift region (DDR) IMPATT diodes.

Main Results:

Schottky barrier diodes demonstrated significantly reduced series resistance.
Achieved a peak continuous wave power output of approximately 300 mW.
Reached a DC to THz conversion efficiency of nearly 13% at 1.0 THz.
MQW structures effectively mitigated noise within the avalanche zone, improving device performance.

Conclusions:

The proposed edge-terminated AlGaN/GaN MQW IMPATT diodes represent a significant advancement in high-power THz sources.
The Schottky barrier configuration offers superior performance in terms of power output and efficiency.
These novel structures hold great promise for future THz technology and its diverse applications.