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Reliability Study of Metal-Oxide Semiconductors in Integrated Circuits.
Boris V Malozyomov1, Nikita V Martyushev2, Natalia Nikolaevna Bryukhanova3
1Department of Electrotechnical Complexes, Novosibirsk State Technical University, 20, Karla Marksa Ave., 630073 Novosibirsk, Russia.
Micromachines
|May 25, 2024
Summary
This study investigates CMOS IC parameter degradation during reliability testing. Activation energy increases with temperature, while acceleration coefficient decreases, with calculated values differing from standard ones.
Area of Science:
- Electrical Engineering
- Materials Science
- Semiconductor Physics
Background:
- Semiconductor devices and integrated circuits (ICs) are prone to parameter degradation.
- Reliability testing is crucial for understanding failure mechanisms in ICs.
- Common failures include quiescent current variations and output voltage instability.
Purpose of the Study:
- To analyze the parameter degradation of the TPS54332 CMOS IC during reliability testing.
- To determine activation energies and acceleration coefficients under various temperature conditions.
- To investigate the relationship between temperature and these reliability parameters.
Main Methods:
- Literature review on semiconductor device reliability and failure modes.
- Experimental reliability tests on TPS54332 IC, focusing on quiescent current and output voltage.
- Calculation of activation energies and acceleration coefficients at different temperature regimes.
- Analysis of fail-safe test results and chip sample characterization.
Main Results:
- Experimental determination of activation energy and acceleration coefficient values.
- Observed linear increase in activation energy with increasing temperature.
- Observed decrease in acceleration coefficient with increasing temperature.
- Calculated activation energy was found to be 0.1 eV lower than the standard value.
Conclusions:
- The study provides critical data on the reliability of the TPS54332 IC.
- Temperature significantly influences activation energy and acceleration coefficient.
- Deviations from standard activation energy values highlight the need for precise reliability assessments.
Keywords:
activation energymetal-oxide semiconductorsmicrocircuitrejection testsreliabilitytemperature regimeMore Related Videos
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