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Updated: Jun 25, 2025
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
Design and Growth of Low Resistivity P-Type AlGaN Superlattice Structure
Yang Liu1, Xiaowei Zhou1,2, Peixian Li1,2
1School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
Abstract:
This work investigated the impact of periodic thickness and doping region on the doping efficiency of the P-type AlGaN superlattice. In this paper, the band structure of the simulated superlattice was analyzed. The superlattice structure of Al0.1Ga0.3N/Al0.4Ga0.6N, and the AlGaN buffer on the sapphire substrate, achieved a resistivity of ~3.3 Ω·cm. The results indicate that barrier doping and low periodic thickness offer significant advantages in introducing a reduction of the resistivity of P-type AlGaN superlattice structures.
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